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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2293 description high collector-emitter sustaining voltage- : v ceo(sus) = 400v (min) high switching speed applications power switching power amplification power driver absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current-continuous 4 a i bm base current-peak 8 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2293 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustainig voltage i c = 200ma; i b = 0 400 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.7 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v h fe-1 dc current gain i c = 5a; v ce = 2v 15 h fe-2 dc current gain i c = 10a; v ce = 2v 8 i cbo collector cutoff current v cb = 500v; i e = 0 0.1 ma i ceo collector cutoff current v ce = 400v; i b = 0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma f t current-gain?bandwidth product i c = 1a; v ce = 10v 20 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 5a; i b1 =- i b2 = 1a; r l = 5 ; v bb2 = 4v 0.7 s isc website www.iscsemi.cn |
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